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30QWK2CZ47
TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type
30QWK2CZ47
Switching Type Power Supply Application Converter & Chopper Application
* * * * Repetitive peak reverse voltage: VRRM = 120 V Peak Forward Voltage: VFM = 0.85 V (max) Average output recified current: IO = 30 A Low switching losses and output noise Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Repetitive peak reverse voltage Average output recified current Peak one cycle surge forward current (non-repetitive, sine wave) Junction temperature Storage temperature range Screw Torque Symbol VRRM IO IFSM Tj Tstg Rating 120 30 250 (50 Hz) -40~150 -40~150 0.6 Unit V A A C C Nm
JEDEC JEITA TOSHIBA
12-10C1A
Weight: 2.0 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25C)
Characteristics Peak forward voltage Repetitive peak reverse current Junction capacitance Thermal resistance Symbol VFM IRRM Cj Rth (j-c) Test Condition IFM = 15 A VRRM = Rated (120 V) VR = 10 V, f = 1.0 MHz Total DC, Junction to case Min Typ. 227 Max 0.85 50 2.5 Unit V A pF C/W
Note: VFM, IRRM, Cj: A value applied to one cell.
Polarity
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30QWK2CZ47
Marking
Abbreviation Code 30QWK2CZ Part No. 30QWK2CZ47
30QWK2CZ
Part No. (or abbreviation code) Lot No.
Characteristics indicator
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Handling Precaution
Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/C. Take this temperature coefficient into account designing a device at low temperature. We recommend that the worst case current be no greater than 80% of the absolute maximum rating of IO and Tj be below 120C. When using this device, take the margin into consideration by using an allowable Tamax-IO curve. This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. Derate this rating when using a device in order to ensure high reliability. We recommend that the device be used at a Tj of below 120C.
IO:
IFSM:
Tj:
Please refer to the Rectifiers databook for further information.
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iF - vF
100 One cell 32 28 24 20 16 12 8
PF (AV) - Io
180 120 90 60 = 30 Rectangular waveform (one cell)
iF (A)
Instantaneous forward current
10
Tj = 150C 100C 75C
25C 1
Average forward power dissipation PF (AV) (W)
0 360 4 0 0 Conduction angle 4 8 12 16 20 24 28 32 36
0.1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous forward voltage vF
(V)
Average output rectified current
Io (A)
Tc max - Io
160 140 120 100 80 60 40 0 360 20 0 0 Conduction angle 4 8 12 16 20 24 28 32 36 = 30 Rectangular waveform (one cell) 60 90 120 180 320 280 240 200 160 120 80 40 0 1
Surge forward current (non-repetitive)
Ta = 25C Single phase full Sine wave f = 50 Hz One cell
Average forward power dissipation Tc max (C)
Surge forward current
IFSM (A)
3
5
10
30
50
100
Average output rectified current
Io
(A)
Number of cycles
rth (j-c) - t
10 One cell 5 1000 500
Cj - VR
(typical)
f = 1 MHz Ta = 25C One cell
Transient thermal impedance rth (j-c) (C/W)
3
(pF)
300
1 0.5 0.3
Junction capacitance
0.01 0.1 1 10
Cj
100 50 30 0.1 0.001 10 1
100
3
5
10
30
50
100
Time t (s)
Reverse voltage
VR (V)
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IR - Tj
100 Pulse measurement (one cell) 100
(typical)
3.2 120 2.8 2.4 VR 2.0 1.6 1.2 0.8 0.4 0 0 120 60 Conduction angle Tj = 150C 180 Rectangular waveform 0 360
PR (AV) - VR
(typical)
(mA)
10 50 30 1 VR = 10 V
Average reverse power dissipation PR (AV) (W)
DC
Reverse current IR
300 240
0.1
0.01
0.001 0
20
40
60
80
100
120
140
160
20
40
60
80
100
120
Junction temperature Tj (C)
Reverse voltage
VR
(V)
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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